Toshiba’s Recently Launched 1200V and 1700V Silicon Carbide MOSFET Modules will Contribute to Littler, More Productive Industrial Hardware
KAWASAKI, Japan—Toshiba Electronic Gadgets & Capacity Enterprise (“Toshiba”) has propelled two silicon carbide (SiC) MOSFET Double Modules: “MG600Q2YMS3,” with a voltage rating of 1200V and deplete current rating of 600A; and “MG400V2YMS3,” with a voltage rating of 1700V and deplete current rating of 400A. The primary Toshiba items with these voltage ratings, connect the already discharged MG800FXF2YMS3 in a lineup of 1200V, 1700V, and 3300V devices.
The modern modules have mounting compatibility with broadly utilized silicon (Si) IGBT modules. Their moo vitality misfortune characteristics meet needs for higher effectiveness and measurable decreases in mechanical gear, such as converters and inverters for railroad vehicles, and renewable vitality control era frameworks.
Applications
- Inverters and converters for railway vehicles
- Renewable energy power generation systems
- Motor control equipment
- High-frequency DC-DC converter
Features
Mounting compatible with Si IGBT modules
Lower loss than Si IGBT modules
MG600Q2YMS3
VDS(on)sense =0.9V (typ.) @ID=600A, Tch=25°C
Eon=25mJ (typ.), Eoff=28mJ (typ.) @VDS=600V, ID=600A, Tch=150°C
MG400V2YMS3
VDS(on)sense=0.8V (typ.) @ID=400A, Tch=25°C
Eon=28mJ (typ.), Eoff=27mJ (typ.) @VDS=900V, ID=400A, Tch=150°C
Built-in NTC Thermistor
Fundamental Specifications
| Part number | MG600Q2YMS3 | MG400V2YMS3 | ||
|---|---|---|---|---|
| Package | 2-153A1A | |||
| Absolute
maximum ratings |
Drain-source voltage VDSS (V) | 1200 | 1700 | |
| Gate-source voltage VGSS (V) | +25/-10 | +25/-10 | ||
| Drain current (DC) ID (A) | 600 | 400 | ||
| Drain current (pulsed) IDP (A) | 1200 | 800 | ||
| Channel temperature Tch (°C) | 150 | 150 | ||
| Isolation voltage Visol (Vrms) | 4000 | 4000 | ||
| Electrical
characteristics |
Drain-source on-voltage (sense)
VDS(on)sense typ. (V) |
@VGS =+20V,
Tch＝25°C |
0.9
@ID＝600A |
0.8
@ID＝400A |
| Source-drain on-voltage (sense)
VSD(on)sense typ. (V) |
@VGS =+20V,
Tch＝25°C |
0.8
@IS＝600A |
0.8
@IS＝400A |
|
| Source-drain off-voltage (sense)
VSD(off)sense typ. (V) |
@VGS =-6V,
Tch＝25°C |
1.6
@IS＝600A |
1.6
@IS＝400A |
|
| Turn-on switching loss Eon typ. (mJ)
Eon typ. (mJ) |
@Tch=150°C | 25
@ VDS=600V, ID=600A |
28
@VDS=900V, ID=400A |
|
| Turn-off switching loss Eoff typ. (mJ)
Eoff typ. (mJ) |
@Tch=150°C | 28
@ VDS=600V, ID=600A |
27
@VDS=900V, ID=400A |
|
| Thermistor characteristics | Rated NTC resistance R typ. (kΩ) | 5.0 | 5.0 | |
| NTC B value B typ. (K) | ＠TNTC=25 – 150°C | 3375 | 3375 | |